agilent hcpl-817 phototransistor optocoupler high density mounting type data sheet features ? current transfer ratio (ctr: min. 50% at i f = 5 ma, v ce = 5 v) ? high input-output isolation voltage (v iso = 5000 vrms) ? response time (t r : typ., 4 m s at v ce = 2 v, i c = 2 ma, r l = 100 w ) ? compact dual-in-line package ? ul approved ? csa approved ? iec/en/din en 60747-5-2 approved ? options available: C leads with 0.4" (10.16 mm) spacing (w00) C leads bends for surface mounting (300) C tape and reel for smd (500) C iec/en/din en 60747-5-2 approvals (060) applications ? signal transmission between circuits of different potentials and impedances ? i/o interfaces for computers ? feedback circuit in power supply description the hcpl-817 contains a light emitting diode optically coupled to a phototransistor. it is packaged in a 4-pin dip package and available in wide-lead spacing option and lead bend smd option. input-output isolation voltage is 5000 vrms. response time, t r , is typically 4 m s and minimum ctr is 50% at input current of 5 ma. functional diagram ordering information specify part number followed by option number (if desired). hcpl-817-xxxx option number 060 = iec/en/din en 60747-5-2 option w00 = 0.4" lead spacing option 300 = lead bend smd option 500 = tape and reel packaging option 00a = rank mark a 00b = rank mark b 00c = rank mark c 00d = rank mark d 00l = rank mark l xxxe = lead free option schematic 4 3 12 pin no. and internal
connection diagram 1. anode
2. cathode 3. emitter
4. collector 1 2 anode cathode v f + i f 4 3 collector emitter i c caution: it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by esd. ( datasheet : )
2 package outline drawings package outline C option w00 package outline C option 300 12 3 4 type number option code
for option 060
only pin one dot a 817 v yww 6.5 ?0.5
(0.256) dimensions in millimeters and (inches) 4.6 ?0.5
(0.181) 2.8 ?0.5
(0.110) 2.54 ?0.25
(0.1) 0.5 ?0.1
(0.02) 3.5 ?0.5
(0.138) 3.3 ?0.5
(0.130) 0.5
(0.02) 7.62 ?0.3
(0.3) 0.35 +0.15/-0.10
(0.014) 7.62 ~ 9.98 typ. rank mark date code 6.5 ?0.5
(0.256) dimensions in millimeters and (inches) 4.6 ?0.5
(0.181) 2.8 ?0.5
(0.110) 2.54 ?0.25
(0.1) 0.5 ?0.1
(0.02) 3.5 ?0.5
(0.138) 7.62 ?0.3
(0.3) 0.35 +0.15/-0.10
(0.014) 10.16 ?0.5
(0.4) 2.3 ?0.5
(0.09) 6.9 ?0.5
(0.272) 6.5 ?0.5
(0.256) dimensions in millimeters and (inches) 4.6 ?0.5
(0.181) 2.54 ?0.25
(0.1) 3.5 ?0.5
(0.138) 7.62 ?0.3
(0.3) 0.35 ?0.25
(0.014) 10.16 ?0.3
(0.4) 1.2 ?0.1
(0.047) 0.35 ?0.25
(0.014) 1.0 ?0.25
(0.039)
3 absolute maximum ratings (t a = 25?c) storage temperature, t s C55?c to +125?c operating temperature, t a C30?c to +100?c lead solder temperature, max. 260?c for 10 s (1.6 mm below seating plane) average forward current, i f 50 ma reverse input voltage, v r 6 v input power dissipation, p i 70 mw collector current, i c 50 ma collector-emitter voltage, v ceo 35 v emitter-collector voltage, v eco 6 v collector power dissipation 150 mw total power dissipation 200 mw isolation voltage, v iso (ac for 1 minute, r.h. = 40 ~ 60%) 5000 vrms * ctr = x 100% i c i f rank mark ctr (%) conditions l 50 ~ 100 i f = 5 ma, v ce = 5 v, t a = 25 c a 80 ~ 160 b 130 ~ 260 c 200 ~ 400 d 300 ~ 600 electrical specifications (t a = 25?c) parameter symbol min. typ. max. units test conditions forward voltage v f C 1.2 1.4 v i f = 20 ma reverse current i r CC10 m av r = 4 v terminal capacitance c t C 30 250 pf v = 0, f = 1 khz collector dark current i ceo C C 100 na v ce = 20 v collector-emitter breakdown voltage bv ceo 35CCvi c = 0.1 ma emitter-collector breakdown voltage bv eco 6CCvi e = 10 m a collector current i c 2.5 C 30 ma i f = 5 ma, v ce = 5 v, *current transfer ratio ctr 50 C 600 % r be = collector-emitter saturation voltage v ce(sat) C 0.1 0.2 v i f = 20 ma, i c = 1 ma response time (rise) t r C418 m sv cc = 2 v, i c = 2 ma response time (fall) t f C318 m sr l = 100 w cut-off frequency f c C 80 C khz v cc = 5 v, i c = 2 ma r l = 100 w , C3 db isolation resistance r iso 5 x 10 10 1 x 10 11 C w dc 500 v 40 ~ 60% r.h. floating capacitance c f C 0.6 1.0 pf v = 0, f = 1 mhz
4 figure 1. forward current vs. temperature. figure 2. collector power dissipation vs. temperature. figure 3. collector-emitter saturation voltage vs. forward current. i f ?forward current ?ma 0 t a ?ambient temperature ?? 75 125 50 25 10 40 0 50 100 -30 60 30 20 p c ?collector power dissipation ?mw 0 t a ?ambient temperature ?? 100 50 200 150 75 125 25 0 50 100 -30 0 i f ?forward current ?ma 14 20 2 6 0 1 3 4 5 6 v ce(sat.) ?collector-emitter
saturation voltage ?v t a = 25? i c = 0.5 ma i c = 1 ma i c = 3 ma i c = 6 ma i c = 7 ma 24 81012 1618 figure 4. forward current vs. forward voltage. figure 5. current transfer ratio vs. forward current. figure 6. collector current vs. collector- emitter voltage. figure 7. relative current transfer ratio vs. temperature. figure 8. collector-emitter saturation voltage vs. temperature. figure 9. collector dark current vs. temperature. i c ?collector current ?ma 0 v ce ?collector-emitter voltage ?v 69 40 20 50 3 0 p c (max.) t a = 25? i f = 30 ma i f = 20 ma i f = 10 ma i f = 5 ma 30 10 i f = 20 ma i f = 10 ma 12 45 78 relative current transfer ratio ?% 0 100 50 150 v ce = 5 v i f = 5 ma t a ?ambient temperature ?? 75 25 0 50 100 -30 v ce(sat.) ?collector-emitter
saturation voltage ?v 0 0.10 0.02 0.16 i c = 1 ma i f = 20 ma t a ?ambient temperature ?? 75 25 0 50 100 -25 0.04 0.06 0.08 0.12 0.14 i ceo ?collector dark current ?a t a ?ambient temperature ?? v ce = 20 v 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 75 25 0 50 100 -25 10 -5 i f ?forward current ?ma 1 v f ?forward voltage ?v 2.0 3.0 10 5 500 1.0 0 t a = 75? 0.5 1.5 2.5 2 20 50 100 200 t a = 50? t a = 25? t a = 0? t a = -25? 0 i f ?forward current ?ma 10 50 40 200 2 1 20 60 120 140 160 ctr ?current transfer ratio ?% v ce = 5 v
t a = 25? 80 100 180 520
5 figure 10. response time vs. load resistance. figure 11. frequency response. response time ?? 0.1 r l ?load resistance ?k w 0.1 5 1 0.5 0.2 0.5 500 0.2 2 10 0.05 2 v ce = 2 v
i c = 2 ma
t a = 25? tf tr 1 5 10 20 50 100 200 ts td voltage gain av ?db f ?frequency ?khz 1 20 500 5 20 10 21050 0.5 0 100 200 r l = 10 k w r l = 1 k w r l = 100 w v ce = 2 v
i c = 2 ma
t a = 25? test circuit for response time test circuit for frequency response v cc r d r l output ~ v cc r d input r l output input output 10% 90% td tr tf ts
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6756 2394 india, australia, new zealand: (+65) 6755 1939 japan: (+81 3) 3335-8152 (domestic/interna- tional), or 0120-61-1280 (domestic only) korea: (+65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (+65) 6755 2044 taiwan: (+65) 6755 1843 data subject to change. copyright ? 2003 agilent technologies, inc. obsoletes 5988-4116en november 4, 2003 5989-0293en
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